H:	ELECTRICITY
H03:	BASIC ELECTRONIC CIRCUITRY
H03K:	PULSE TECHNIQUE
H03K3/00:	Circuits for generating electric pulses; Monostable, bistable or multistable circuits
H03K3/01:	. Details
H03K3/011:	. . Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature to maintain energy constant H03K3/015
H03K3/012:	. . Modifications of generator to improve response time or to decrease power consumption
H03K3/013:	. . Modifications of generator to prevent operation by noise or interference
H03K3/014:	. . Modifications of generator to ensure starting of oscillations
H03K3/015:	. . Modifications of generator to maintain energy constant
H03K3/017:	. . Adjustment of width or dutycycle of pulses
H03K3/02:	. Generators characterised by the type of circuit or by the means used for producing pulses
H03K3/021:	. . by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT
H03K3/023:	. . by the use of differential amplifiers or comparators, with internal or external positive feedback
H03K3/0231:	. . . Astable circuits H03K3/03D takes precedence
H03K3/0231B:	. . . . Stabilisation of output, e.g. using crystal
H03K3/0232:	. . . Monostable circuits
H03K3/0233:	. . . Bistable circuits
H03K3/0233B:	. . . . of the master-slave type
H03K3/0233D:	. . . . provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails digital storage cells each combining volatile and non-volatile storage properties G11C14/00
H03K3/0233F:	. . . . Bistables with hysteresis, e.g. Schmitt trigger non-regenerative amplitude discriminators G01R19/165
H03K3/0234:	. . . Multistable circuits
H03K3/027:	. . by the use of logic circuits, with internal or external positive feedback
H03K3/03:	. . . Astable circuits
H03K3/033:	. . . Monostable circuits
H03K3/037:	. . . Bistable circuits
H03K3/037B:	. . . . of the master-slave type
H03K3/037C:	. . . . provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails digital storage cells each combining volatile and non-volatile storage properties G11C14/00
H03K3/037F:	. . . . Bistables with hysteresis, e.g. Schmitt trigger non-regenerative amplitude discriminators G01R19/165
H03K3/038:	. . . Multistable circuits
H03K3/03B:	. . . . Stabilisation of output, e.g. using crystal
H03K3/03D:	. . . . Ring oscillators
H03K3/03D2:	. . . . . with differential cells
H03K3/04:	. . by the use, as active elements, of vacuum tubes only, with positive feedback
H03K3/05:	. . . using means other than a transformer for feedback
H03K3/06:	. . . . using at least two tubes so coupled that the input of one is derived from the output of another, e.g. multivibrator
H03K3/08:	. . . . . astable
H03K3/09:	. . . . . . Stabilisation of output
H03K3/10:	. . . . . monostable
H03K3/12:	. . . . . bistable
H03K3/13:	. . . . . . Bistables with hysteresis, e.g. Schmitt trigger
H03K3/14:	. . . . . multistable
H03K3/16:	. . . using a transformer for feedback, e.g. blocking oscillator with saturable core
H03K3/22:	. . . . specially adapted for amplitude comparison, i.e. Multiar
H03K3/26:	. . by the use, as active elements, of bipolar transistors with internal or external positive feedback
H03K3/28:	. . . using means other than a transformer for feedback
H03K3/281:	. . . . using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
H03K3/282:	. . . . . astable
H03K3/282B:	. . . . . . Emitters connected to one another by using a capacitor
H03K3/282C:	. . . . . . using two active transistor of the same conductivity type H03K3/282B takes precedence
H03K3/282C1:	. . . . . . . in an asymmetrical circuit configuration
H03K3/282D:	. . . . . . using two active transistors of the complementary type H03K3/282B take precedence
H03K3/282D1:	. . . . . . . in an asymmetrical circuit configuration
H03K3/283:	. . . . . . Stabilisation of output e.g. using crystal
H03K3/284:	. . . . . monostable
H03K3/286:	. . . . . bistable
H03K3/286B:	. . . . . . ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails digital storage cells each combining volatile and non-volatile storage properties G11C14/00
H03K3/287:	. . . . . . using additional transistors in the feedback circuit
H03K3/288:	. . . . . . using additional transistors in the input circuit
H03K3/2885:	. . . . . . . the input circuit having a differential configuration
H03K3/289:	. . . . . . of the master-slave type
H03K3/2893:	. . . . . . Bistables with hysteresis, e.g. Schmitt trigger
H03K3/2897:	. . . . . . . with an input circuit of differential configuration
H03K3/29:	. . . . . multistable
H03K3/30:	. . . using a transformer for feedback, e.g. blocking oscillator
H03K3/313:	. . by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic
H03K3/315:	. . . the devices being tunnel diodes
H03K3/33:	. . by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect
H03K3/335:	. . by the use, as active elements, of semiconductor devices with more than two electrodes and exhibiting avalanche effect
H03K3/35:	. . by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
H03K3/351:	. . . the devices being unijunction transistors
H03K3/352:	. . . the devices being thyristors
H03K3/3525:	. . . . Anode gate thyristors or programmable unijunction transistors
H03K3/353:	. . by the use, as active elements, of field-effect transistors with internal or external positive feedback
H03K3/354:	. . . Astable circuits
H03K3/354B:	. . . . Stabilisation of output, e.g. using crystal
H03K3/355:	. . . Monostable circuits
H03K3/356:	. . . Bistable circuits
H03K3/3562:	. . . . of the master-slave type
H03K3/3562B:	. . . . . using complementary field-effect transistors
H03K3/3565:	. . . . Bistables with hysteresis, e.g. Schmitt trigger
H03K3/3568:	. . . Multistable circuits
H03K3/356C:	. . . . ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails digital storage cells each combining volatile and non-volatile storage properties G11C14/00
H03K3/356D:	. . . . using additional transistors in the input circuit H03K3/356G, H03K3/3562 take precedence
H03K3/356D1:	. . . . . with synchronous operation H03K3/356D2, H03K3/356D4 take precedence
H03K3/356D2:	. . . . . the input circuit having a differential configuration
H03K3/356D2B:	. . . . . . with synchronous operation
H03K3/356D4:	. . . . . using pass gates
H03K3/356D4B:	. . . . . . with synchronous operation
H03K3/356E:	. . . . using additional transistors in the feedback circuit H03K3/356G, H03K3/3562 take precedence
H03K3/356E2:	. . . . . with synchronous operation
H03K3/356F:	. . . . with additional means for controlling the main nodes H03K3/356G, H03K3/3562 take precedence
H03K3/356F2:	. . . . . with synchronous operation
H03K3/356G:	. . . . using complementary field-effect transistors H03K3/3562B takes precedence
H03K3/356G2:	. . . . . using additional transistors in the input circuit
H03K3/356G2B:	. . . . . . with synchronous operation H03K3/356G2D, H03K3/356G2F take precedence
H03K3/356G2D:	. . . . . . the input circuit having a differential configuration
H03K3/356G2D2:	. . . . . . . with synchronous operation
H03K3/356G2F:	. . . . . . using pass gates
H03K3/356G2F2:	. . . . . . . with synchronous operation
H03K3/356G4:	. . . . . using additional transistors in the feedback circuit
H03K3/356G4B:	. . . . . . with synchronous operation
H03K3/356G6:	. . . . . with additional means for controlling the main nodes
H03K3/356G6B:	. . . . . . with synchronous operation
H03K3/357:	. . by the use, as active elements, of bulk negative resistance devices, e.g. Gunn-effect devices
H03K3/36:	. . by the use, as active elements, of semiconductors, not otherwise provided for
H03K3/37:	. . by the use, as active elements, of gas-filled tubes, e.g. astable trigger circuits
H03K3/38:	. . by the use, as active elements, of superconductive devices
H03K3/40:	. . by the use, as active elements, of electrochemical cells
H03K3/42:	. . by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
H03K3/43:	. . by the use, as active elements, of beam deflection tubes
H03K3/45:	. . by the use, as active elements, of non-linear magnetic or dielectric devices
H03K3/45B:	. . . using thin films
H03K3/47:	. . . the devices being parametrons
H03K3/49:	. . . the devices being ferro-resonant
H03K3/51:	. . . the devices being multi-aperture magnetic cores, e.g. transfluxors
H03K3/53:	. . by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
H03K3/537:	. . . the switching device being a spark gap
H03K3/543:	. . . the switching device being a vacuum tube
H03K3/55:	. . . the switching device being a gas-filled tube having a control electrode
H03K3/57:	. . . the switching device being a semiconductor device
H03K3/59:	. . by the use of galvano-magnetic devices, e.g. Hall effect devices
H03K3/64:	. Generators producing trains of pulses, i.e. finite sequences of pulses
H03K3/66:	. . by interrupting the output of a generator
H03K3/70:	. . . time intervals between all adjacent pulses of one train being equal
H03K3/72:	. . with means for varying repetition rate of trains
H03K3/78:	. Generating a single train of pulses having a predetermined pattern, e.g. a predetermined number
H03K3/80:	. Generating train of sinusoidal oscillations
H03K3/84:	. Generating pulses having a predetermined statistical distribution of a parameter, e.g. random pulse generators
H03K3/86:	. Generating pulses by means of delay lines and not covered by the preceding sub-groups
H03K4/00:	Generating pulses having essentially a finite slope or stepped portions
H03K4/02:	. having stepped portions, e.g. staircase waveform
H03K4/02C:	. . by repetitive charge or discharge of a capacitor, analogue generators
H03K4/02D:	. . using digital techniques
H03K4/04:	. having parabolic shape
H03K4/06:	. having triangular shape
H03K4/06H:	. . high voltage - or current generators
H03K4/06M:	. . using a Miller-integrator H03K4/08 takes precedence
H03K4/08:	. . having sawtooth shape
H03K4/08B:	. . . Protection of sawtooth generators
H03K4/10:	. . . using as active elements vacuum tubes only
H03K4/12:	. . . . in which a sawtooth voltage is produced across a capacitor
H03K4/14:	. . . . . using two tubes so coupled that the input of each one is derived from the output of the other, e.g. multivibrator multivibrator generating other pulses H03K3/00
H03K4/16:	. . . . . using a single tube with positive feedback through transformer, e.g. blocking oscillator blocking oscillators generating other pulses H03K3/00
H03K4/18:	. . . . . using a single tube exhibiting negative resistance between two of its electrodes, e.g. transitron, dynatron
H03K4/20:	. . . . . using a tube with negative feedback by capacitor, e.g. Miller integrator
H03K4/22:	. . . . . . combined with transitron, e.g. phantastron, sanatron
H03K4/24:	. . . . . Boot-strap generators
H03K4/26:	. . . . in which a sawtooth current is produced through an inductor
H03K4/28:	. . . . . using a tube operating as a switching device
H03K4/32:	. . . . . . combined with means for generating the driving pulses
H03K4/34:	. . . . . . . using a single tube with positive feedback through a transformer
H03K4/36:	. . . . . . . using a single tube exhibiting negative resistance between two of its electrodes, e.g. transitron, dynatron
H03K4/38:	. . . . . . . . combined with Miller integrator
H03K4/39:	. . . . . using a tube operating as an amplifier
H03K4/41:	. . . . . . with negative feedback through a capacitor, e.g. Miller-integrator
H03K4/43:	. . . . . . combined with means for generating the driving pulses
H03K4/48:	. . . using as active elements semiconductor devices
H03K4/50:	. . . . in which a sawtooth voltage is produced across a capacitor
H03K4/501:	. . . . . the starting point of the flyback period being determined by the amplitude of the voltage across the capacitor, e.g. by a comparator
H03K4/502:	. . . . . . the capacitor being charged from a constant-current source
H03K4/52:	. . . . . using two semiconductor devices so coupled that the input of each one is derived from the output of the other, e.g. multivibrator multivibrators generating other pulses H03K3/00
H03K4/54:	. . . . . using a single semiconductor device with positive feedback through a transformer, e.g. blocking oscillator blocking oscillators generating other pulses H03K3/00
H03K4/56:	. . . . . using a semiconductor device with negative feedback through a capacitor, e.g. Miller integrator
H03K4/58:	. . . . . Boot-strap generators
H03K4/60:	. . . . in which a sawtooth current is produced through an inductor
H03K4/62:	. . . . . using a semiconductor device operating as a switching device
H03K4/62D:	. . . . . . using pulse-modulation techniques for the generation of the sawtooth wave, e.g. class D, switched mode
H03K4/64:	. . . . . . combined with means for generating the driving pulses H03K4/62D takes precedence
H03K4/66:	. . . . . . . using a single device with positive feedback, e.g. blocking oscillator
H03K4/68:	. . . . . . Generators in which the switching device is conducting during the fly-back part of the cycle
H03K4/69:	. . . . . using a semiconductor device operating as an amplifier
H03K4/69B:	. . . . . . operating in push-pull, e.g. class B H03K4/69F takes precedence
H03K4/69F:	. . . . . . using means for reducing power dissipation or for shortening the flyback time, e.g. applying a higher voltage during flyback time
H03K4/71:	. . . . . . with negative feedback through a capacitor, e.g. Miller-integrator
H03K4/72:	. . . . . . combined with means for generating the driving pulses
H03K4/72B:	. . . . . . . Push-pull amplifier circuits
H03K4/787:	. . . using as active elements semiconductor devices with two electrodes and exhibiting a negative resistance characteristic
H03K4/793:	. . . . using tunnel diodes
H03K4/80:	. . . using as active elements multi-layer diodes
H03K4/83:	. . . using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
H03K4/83D:	. . . . using pulse-modulation techniques for the generation of the sawtooth wave, e.g. class D, switched mode
H03K4/84:	. . . . Generators in which the semiconductor device is conducting during the fly-back part of the cycle H03K4/83D takes precedence
H03K4/86:	. . . using as active elements gas-filled tubes or spark-gaps
H03K4/88:	. . . using as active elements electrochemical cells or galvano-magnetic or photo-electric elements
H03K4/90:	. . . Linearisation of ramp ; Synchronisation of pulses
H03K4/92:	. having a waveform comprising a portion of a sinusoid
H03K4/94:	. having trapezoidal shape
H03K5/00:	Manipulating pulses not covered by one of the other main groups in this subclass
H03K5/003:	. Changing the DC level
H03K5/007:	. . Base line stabilisation
H03K5/00C:	. Changing the frequency modulating pulses H03K7/00; frequency dividers H03K21/00 to H03K29/00; additive or subtractive mixing of two pulse rates into one G06F7/60H; pulse rate dividers G06F7/68
H03K5/01:	. Shaping pulses
H03K5/02:	. . by amplifying
H03K5/02B:	. . . using field effect transistors
H03K5/02D:	. . . with a bidirectional operation
H03K5/04:	. . by increasing duration; by decreasing duration
H03K5/05:	. . . by the use of clock signals or other time reference signals
H03K5/06:	. . . by the use of delay lines or other analogue delay elements
H03K5/06B:	. . . . using dispersive delay lines
H03K5/07:	. . . by the use of resonant circuits
H03K5/08:	. . by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
H03K5/08B:	. . . with an adaptive threshold
H03K5/08B2:	. . . . modified by switching, e.g. by a periodic signal or by a signal in synchronism with the transitions of the output signal
H03K5/08B4:	. . . . generated by feedback
H03K5/08B4B:	. . . . . modified by switching, e.g. by a periodic signal or by a signal in synchronism with the transitions of the output signal
H03K5/12:	. . by steepening leading or trailing edges
H03K5/125:	. Discriminating pulses
H03K5/1252:	. . Suppression or limitation of noise or interference
H03K5/1254:	. . . specially adapted for pulses generated by closure of switches, i.e. anti-bouncing devices
H03K5/13:	. Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals measuring time intervals using electronic timing, e.g. counting means G04F1/00B
H03K5/135:	. . by the use of time reference signals, e.g. clock signals
H03K5/13B:	. . digitally controlled
H03K5/13D:	. . using a chain of active delay devices
H03K5/13D2:	. . . with field-effect transistors
H03K5/14:	. . by the use of delay lines using active delay devices H03K5/13D
H03K5/145:	. . by the use of resonant circuits
H03K5/15:	. Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors
H03K5/151:	. . with two complementary outputs
H03K5/151B:	. . . non-overlapping
H03K5/153:	. Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
H03K5/1532:	. . Peak detectors
H03K5/1534:	. . Transition or edge detectors
H03K5/1536:	. . Zero-crossing detectors
H03K5/156:	. Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
H03K5/156D:	. . the output pulses having a constant duty cycle
H03K5/159:	. Applications of delay lines not covered by the preceding subgroups
H03K5/15C:	. . with two programmable outputs
H03K5/15D:	. . with more than two outputs
H03K5/15D2:	. . . programmable
H03K5/15D4:	. . . with asynchronously driven series connected output stages
H03K5/15D4B:	. . . . using a chain of bistable devices
H03K5/15D4D:	. . . . using a chain of active delay devices H03K5/15D4M takes precedence
H03K5/15D4L:	. . . . using a tapped delay line
H03K5/15D4M:	. . . . using a chain of monostable devices
H03K5/15D6:	. . . with parallel driven output stages; with synchronously driven series connected output stages
H03K5/15D6B:	. . . . using bistable devices H03K5/15D6S takes precedence
H03K5/15D6C:	. . . . using a plurality of comparators
H03K5/15D6L:	. . . . using a plurality of delay lines
H03K5/15D6M:	. . . . using a plurality of monostables devices
H03K5/15D6S:	. . . . using devices arranged in a shift register
H03K5/19:	. Monitoring patterns of pulse trains
H03K5/22:	. Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
H03K5/24:	. . the characteristic being amplitude
H03K5/24B:	. . . using bipolar transistors H03K5/24C takes precedence
H03K5/24B2:	. . . . with at least one differential stage
H03K5/24B4:	. . . . using clock signals
H03K5/24C:	. . . using a combination of bipolar and field-effect transistors
H03K5/24C2:	. . . . with at least one differential stage
H03K5/24C4:	. . . . using clock signals
H03K5/24D:	. . . using diodes
H03K5/24F:	. . . using field effect transistors H03K5/24C takes precedence
H03K5/24F2:	. . . . with at least one differential stage
H03K5/24F4:	. . . . using clock signals
H03K5/26:	. . the characteristic being duration, interval, position, frequency, or sequence
H03K6/00:	Manipulating pulses having a finite slope and not covered by one of the other main groups of this subclass
H03K6/02:	. Amplifying pulses generation of a sawtooth current through an inductor by amplification H03K4/28, H03K4/39, H03K4/43, H03K4/62, H03K4/69
H03K6/04:	. Modifying slopes of pulses, e.g. S-correction
H03K7/00:	Modulating pulses with a continuously-variable modulating signal
H03K7/02:	. Amplitude modulation, i.e. PAM
H03K7/04:	. Position modulation, i.e. PPM
H03K7/06:	. Frequency or rate modulation, i.e. PFM or PRM
H03K7/08:	. Duration or width modulation Duty cycle modulation
H03K7/10:	. Combined modulation, e.g. rate modulation and amplitude modulation
H03K9/00:	Demodulating pulses which have been modulated with a continuously-variable signal
H03K9/02:	. of amplitude-modulated pulses
H03K9/04:	. of position-modulated pulses
H03K9/06:	. of frequency- or rate-modulated pulses
H03K9/08:	. of duration- or width-mudulated pulses or of duty-cycle modulated pulses
H03K9/10:	. of pulses having combined modulation
H03K11/00:	Transforming types of modulations, e.g. position-modulated pulses into duration-modulated pulses
H03K12/00:	Producing pulses by distorting or combining sinusoidal waveforms
H03K17/00:	Electronic switching or gating, i.e. not by contact-making or -braking
H03K17/00M:	. Switching arrangements with several input- or output terminals code converters H03M5/00, H03M7/00
H03K17/00M2:	. . with several inputs only
H03K17/00M4:	. . with several outputs only
H03K17/04:	. Modifications for accelerating switching
H03K17/041:	. . without feedback from the output circuit to the control circuit H03K17/04C, H03K17/04E take precedence
H03K17/0412:	. . . by measures taken in the control circuit
H03K17/0412B:	. . . . in field-effect transistor switches
H03K17/0412D:	. . . . in bipolar transistor switches
H03K17/0414:	. . . . Anti-saturation measures
H03K17/0416:	. . . by measures taken in the output circuit
H03K17/0416B:	. . . . in field-effect transistor switches
H03K17/0416D:	. . . . in bipolar transistor switches
H03K17/041B:	. . . in field-effect transistor switches H03K17/0412, H03K17/0416 take precedence
H03K17/041D:	. . . in bipolar transistor switches H03K17/0412, H03K17/0416 take precedence
H03K17/042:	. . by feedback from the output circuit to the control circuit H03K17/04C, H03K17/04E take precedence
H03K17/0422:	. . . Anti-saturation measures
H03K17/0424:	. . . by the use of a transformer
H03K17/042B:	. . . in field-effect transistor switches
H03K17/042D:	. . . in bipolar transistor switches
H03K17/04C:	. . in thyristor switches
H03K17/04E:	. . in composite switches
H03K17/06:	. Modifications for ensuring a fully conducting state
H03K17/06B:	. . in field-effect transistor switches
H03K17/08:	. Modifications for protecting switching circuit against overcurrent or overvoltage
H03K17/081:	. . without feedback from the output circuit to the control circuit
H03K17/0812:	. . . by measures taken in the control circuit
H03K17/0812B:	. . . . in field-effect transistor switches
H03K17/0812C:	. . . . in thyristor switches
H03K17/0812D:	. . . . in bipolar transitor switches
H03K17/0812E:	. . . . in composite switches
H03K17/0814:	. . . by measures taken in the output circuit
H03K17/0814B:	. . . . in field-effect transistor switches
H03K17/0814C:	. . . . in thyristor switches
H03K17/0814D:	. . . . in bipolar transistor switches
H03K17/0814E:	. . . . in composite switches
H03K17/081B:	. . . in field-effect transistor switches H03K17/0812, H03K17/0814 take precedence
H03K17/081C:	. . . [N: in thyristor switches ]
H03K17/081D:	. . . in bipolar transistor switches H03K17/0812, H03K17/0814 take precedence
H03K17/081E:	. . . [N: in composite switches ]
H03K17/082:	. . by feedback from the output circuit to the control circuit
H03K17/082B:	. . . in field-effect transistor switches
H03K17/082C:	. . . in thyristor switches
H03K17/082D:	. . . in bipolar transistor switches
H03K17/082E:	. . . in composite switches
H03K17/10:	. Modifications for increasing the maximum permissible switched voltage
H03K17/10B:	. . in field-effect transistor switches
H03K17/10C:	. . in thyristor switches
H03K17/10E:	. . in composite switches
H03K17/12:	. Modifications for increasing the maximum permissible switched current
H03K17/12B:	. . in field-effect transistor switches
H03K17/12C:	. . in thyristor switches
H03K17/12E:	. . in composite switches
H03K17/13:	. Modifications for switching at zero crossing
H03K17/13B:	. . in field-effect transistor switches
H03K17/13C:	. . in thyristor switches
H03K17/14:	. Modifications for compensating variations of physical values, e.g. of temperature
H03K17/14B:	. . in field-effect transistor switches
H03K17/16:	. Modifications for eliminating interference voltages or currents
H03K17/16B:	. . in field-effect transistor switches
H03K17/16B2:	. . . without feedback from the output circuit to the control circuit
H03K17/16B2B:	. . . . Soft switching
H03K17/16B2B2:	. . . . . using parallel switching arrangements
H03K17/16B4:	. . . by feedback from the output circuit to the control circuit
H03K17/16B4B:	. . . . Soft switching
H03K17/16B4B2:	. . . . . using parallel switching arrangements
H03K17/16E:	. . in composite switches
H03K17/18:	. Modifications for indicating state of switch
H03K17/20:	. Modifications for resetting core switching units to a predetermined state
H03K17/22:	. Modifications for ensuring a predetermined initial state when the supply voltage has been applied
H03K17/22B:	. . in field-effect transistor switches
H03K17/24:	. . Storing the actual state when the supply voltage fails
H03K17/26:	. Modifications for temporary blocking after receipt of control pulses
H03K17/28:	. Modifications for introducing a time delay before switching
H03K17/284:	. . in field effect transistor switches
H03K17/288:	. . in tube switches
H03K17/292:	. . in thyristor, unijunction transistor or programmable unijunction transistor switches
H03K17/296:	. Time-programme switches providing a choice of time-intervals for executing more than one switching action and automatically terminating their operation after the programme is completed
H03K17/30:	. Modifications for providing a predetermined threshold before switching
H03K17/30B:	. . in field-effect transistor switches
H03K17/30C:	. . in thyristor switches
H03K17/51:	. characterised by the components used
H03K17/52:	. . using gas-filled tubes
H03K17/54:	. . using vacuum tubes
H03K17/54B:	. . . using micro-engineered devices, e.g. field emission devices
H03K17/56:	. . using semiconductor devices
H03K17/567:	. . . Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
H03K17/58:	. . . using tunnel diodes
H03K17/60:	. . . using bipolar transistors
H03K17/605:	. . . . with galvanic isolation between the control circuit and the output circuit
H03K17/60C:	. . . . using transformer coupling H03K17/61 takes precedence
H03K17/60D:	. . . . in integrated circuits
H03K17/60E:	. . . . with coupled emitters
H03K17/61:	. . . . . using transformer coupling
H03K17/615:	. . . . in a Darlington configuration
H03K17/62:	. . . . Switching arrangements with several input- or output-terminals
H03K17/62B:	. . . . . without selecting means H03K17/62E to H03K17/62H take precedence
H03K17/62B2:	. . . . . . using current steering means
H03K17/62C:	. . . . . [N: combined with selecting means ]
H03K17/62C2:	. . . . . . using current steering means
H03K17/62D:	. . . . . with storage of control signal
H03K17/62E:	. . . . . with several inputs only and without selecting means
H03K17/62E2:	. . . . . . using current steering means
H03K17/62F:	. . . . . with several inputs only combined with selecting means
H03K17/62F2:	. . . . . . using current steering means
H03K17/62G:	. . . . . with several outputs only and without selecting means
H03K17/62G2:	. . . . . . using current steering means
H03K17/62H:	. . . . . with several outputs only combined with selecting means
H03K17/62H2:	. . . . . . using current steering means
H03K17/64:	. . . . having inductive loads driving circuits for electromagnets making use of a switching regulator provisionally in H01H47/32B
H03K17/66:	. . . . Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
H03K17/66B:	. . . . . connected to both load terminals
H03K17/66B2:	. . . . . . each output circuit comprising more than one controlled bipolar transistor
H03K17/66B2C:	. . . . . . . using complementary bipolar transistors
H03K17/66B2D:	. . . . . . . in a symmetrical configuration
H03K17/66D:	. . . . . connected to one load terminal only
H03K17/66D2:	. . . . . . the output circuit comprising more than one controlled bipolar transistor
H03K17/66D2C:	. . . . . . . using complementary bipolar transistors
H03K17/66D2D:	. . . . . . . in a symmetrical configuration
H03K17/68:	. . . . specially adapted for switching ac currents or voltages
H03K17/687:	. . . using field-effect transistors
H03K17/687B:	. . . . the output circuit comprising more than one controlled field-effect transistor
H03K17/687B2:	. . . . . using complementary field-effect transistors
H03K17/687B4:	. . . . . in a symmetrical configuration
H03K17/687D:	. . . . the control circuit comprising active elements different from those used in the output circuit
H03K17/689:	. . . . with galvanic isolation between the control circuit and the output circuit
H03K17/689B:	. . . . . using acoustic means
H03K17/691:	. . . . . using transformer coupling
H03K17/693:	. . . . Switching arrangements with several input- or output-terminals
H03K17/70:	. . . having two electrodes and exhibiting negative resistance
H03K17/72:	. . . having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
H03K17/722:	. . . . with galvanic isolation between the control circuit and the output circuit
H03K17/722B:	. . . . . using acoustic means
H03K17/723:	. . . . . using transformer coupling
H03K17/725:	. . . . for ac voltages or currents
H03K17/73:	. . . . for dc voltages or currents
H03K17/732:	. . . . . Measures for enabling turn-off
H03K17/735:	. . . . Switching arrangements with several input- or output-terminals
H03K17/73L:	. . . . . with inductive load
H03K17/74:	. . using diodes using a combination of diodes and other devices H03K17/567; using tunnel diodes H03K17/58
H03K17/76:	. . . Switching arrangements with several input- or output-terminals
H03K17/78:	. . using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
H03K17/785:	. . . controlling field-effect transistor switches
H03K17/79:	. . . controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
H03K17/795:	. . . controlling bipolar transistors
H03K17/795B:	. . . . using phototransistors
H03K17/80:	. . using non-linear magnetic devices; using non-linear dielectric devices H03K17/95, H03K17/97 take precedence
H03K17/81:	. . . Switching arrangements with several input- or output-terminals
H03K17/82:	. . . using transfluxors
H03K17/84:	. . . using thin-film devices
H03K17/86:	. . . using twistors
H03K17/88:	. . using beam-deflection tubes
H03K17/90:	. . using galvano-magnetic devices, e.g. Hall effect devices
H03K17/92:	. . using superconductive devices
H03K17/94:	. characterised by the way in which the control signal is generated
H03K17/945:	. . Proximity switches
H03K17/94L:	. . using an optical detector H03K17/968 takes precedence
H03K17/94L1:	. . . using a plurality of optical emitters or detectors, e.g. keyboard
H03K17/95:	. . . using a magnetic detector
H03K17/955:	. . . using a capacitive detector
H03K17/95B:	. . . . Measures for increasing reliability
H03K17/95C:	. . . . Constructional details
H03K17/95D:	. . . . Measures for supplying operating voltage to the detector circuit
H03K17/95E:	. . . . using digital techniques
H03K17/95F:	. . . . using non-linear magnetic devices
H03K17/95G:	. . . . using galvanomagnetic devices
H03K17/95H:	. . . . using inductive coils
H03K17/95H2:	. . . . . with a galvanically isolated probe
H03K17/95H4:	. . . . . [N: controlled by an oscillatory signal ]
H03K17/95H6:	. . . . . forming part of an oscillator H03K17/95H8 takes precedence
H03K17/95H6B:	. . . . . . with variable frequency
H03K17/95H6D:	. . . . . . with variable amplitude
H03K17/95H8:	. . . . . in a resonant circuit
H03K17/95H8B:	. . . . . . controlled by an oscillatory signal
H03K17/95H8D:	. . . . . . forming part of an oscillator
H03K17/95H8D2:	. . . . . . . with variable frequency
H03K17/95H8D4:	. . . . . . . with variable amplitude
H03K17/96:	. . Touch switches
H03K17/965:	. . Switches controlled by moving an element forming part of the switch
H03K17/967:	. . . having a plurality of control members, e.g. keyboard
H03K17/968:	. . . using opto-electronic devices
H03K17/969:	. . . . having a plurality of control members, e.g. keyboard
H03K17/96B:	. . . using a plurality of detectors, e.g. keyboard
H03K17/96C:	. . . Capacitive touch switches
H03K17/96C1:	. . . . using a plurality of detectors, e.g. keyboard
H03K17/96F:	. . . using a force resistance transducer
H03K17/96L:	. . . Optical touch switches
H03K17/96L1:	. . . . using a plurality of detectors, e.g. keyboard
H03K17/96L3:	. . . . using a light source as part of the switch
H03K17/96L3P:	. . . . . using a pulsed light source
H03K17/96L5:	. . . . using a light guide
H03K17/96P:	. . . Piezo-electric touch switches
H03K17/96P1:	. . . . using a plurality of detectors, e.g. keyboard
H03K17/96R:	. . . Resistive touch switches
H03K17/96R1:	. . . . using a plurality of detectors, e.g. keyboard
H03K17/97:	. . . using a magnetic movable element
H03K17/972:	. . . . having a plurality of control members, e.g. keyboard
H03K17/975:	. . . using a capacitive movable element
H03K17/98:	. . . . having a plurality of control members, e.g. keyboard
H03K19/00:	Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits inverting circuits used as delay elements H03K5/13
H03K19/003:	. Modifications for increasing the reliability for protection
H03K19/003B:	. . in bipolar transistor circuits
H03K19/003C:	. . in field-effect transistor circuits
H03K19/003D:	. . Delay compensation
H03K19/003H:	. . Radiation hardening
H03K19/003H2:	. . . In field effect transistor circuits
H03K19/003J:	. . Modifications for eliminating interference or parasitic voltages or currents
H03K19/003J2:	. . . in bipolar transistor circuits
H03K19/003J4:	. . . in field effect transistor circuits
H03K19/003K:	. . Modifications for compensating variations of temperature, supply voltage or other physical parameters
H03K19/003K2:	. . . in bipolar transistor circuits
H03K19/003K4:	. . . in field effect transistor circuits
H03K19/003R:	. . by circuit redundancy H03K19/007B takes precedence
H03K19/007:	. Fail-safe circuits
H03K19/007B:	. . by using two redundant chains
H03K19/00E:	. Multistate logic H03K19/02 takes precedence
H03K19/00L:	. Modifications of input or output impedance
H03K19/00P:	. Arrangements for reducing power consumption
H03K19/00P2:	. . in bipolar transistor circuits
H03K19/00P4:	. . in field effect transistor circuits
H03K19/00P6:	. . by using a control or a clock signal, e.g. in order to apply power supply
H03K19/00P8:	. . by energy recovery or adiabatic operation
H03K19/00T:	. Modifications of threshold for electronic switching or gating H03K17/30
H03K19/00T2:	. . in bipolar transistor circuits
H03K19/00T4:	. . in field effect transistor circuits
H03K19/01:	. Modifications for accelerating switching
H03K19/013:	. . in bipolar transistor circuits
H03K19/013B:	. . . by bootstrapping, i.e. by positive feed-back
H03K19/013C:	. . . by means of a pull-up or down element
H03K19/017:	. . in field-effect transistor circuits
H03K19/0175:	. Coupling arrangements; Interface arrangements
H03K19/0175B:	. . Interface arrangements
H03K19/0175B2:	. . . using a combination of bipolar and field effect transistors (BIFET)
H03K19/0175B2D:	. . . . with at least one differential stage
H03K19/0175B4:	. . . using opto-electronic devices
H03K19/0175C:	. . Coupling arrangements; Impedance matching circuits
H03K19/0175C2:	. . . using a combination of bipolar and field effect transistors (BIFET)
H03K19/0175C2D:	. . . . with at least one differential stage
H03K19/0175C4:	. . . using opto-electronic devices
H03K19/0175P:	. . programmable
H03K19/0175R:	. . with a bidirectional operation
H03K19/017B:	. . . in asynchronous circuits
H03K19/017B1:	. . . . by bootstrapping, i.e. by positive feed-back
H03K19/017B2:	. . . . by means of a pull-up or down element
H03K19/017C:	. . . in synchronous circuits, i.e. by using clock signals
H03K19/017C1:	. . . . by bootstrapping, i.e. by positive feed-back
H03K19/017C2:	. . . . by means of a pull-up or down element
H03K19/018:	. . using bipolar transistors only
H03K19/0185:	. . using field effect transistors only
H03K19/0185B:	. . . Interface arrangements
H03K19/0185B2:	. . . . with at least one differential stage H03K19/0185B4D and H03K19/0185B6D take precedence
H03K19/0185B4:	. . . . of complementary type, e.g. CMOS
H03K19/0185B4D:	. . . . . with at least one differential stage
H03K19/0185B6:	. . . . of Schottky barrier type (MESFET)
H03K19/0185B6D:	. . . . . with at least one differential stage
H03K19/0185B8:	. . . . synchronous, i.e. using clock signals
H03K19/0185C:	. . . Coupling arrangements; Impedance matching circuits
H03K19/0185C2:	. . . . with at least one differential stage H03K19/0185C4D takes precedence
H03K19/0185C4:	. . . . of complementary type, e.g. CMOS
H03K19/0185C4D:	. . . . . with at least one differential stage
H03K19/0185P:	. . . programmable
H03K19/0185R:	. . . with a bidirectional operation
H03K19/018B:	. . . Interface arrangements
H03K19/018B2:	. . . . with at least one differential stage
H03K19/018B4:	. . . . for integrated injection logic (I2L)
H03K19/018C:	. . . Coupling arrangements, impedance matching circuits
H03K19/018C2:	. . . . with at least one differential stage
H03K19/018P:	. . . programmable
H03K19/018R:	. . . with a bidirectional operation
H03K19/02:	. using specified components
H03K19/04:	. . using gas-filled tubes
H03K19/06:	. . using vacuum tubes
H03K19/08:	. . using semiconductor devices
H03K19/082:	. . . using bipolar transistors in combination with field-effect transistor H03K19/094
H03K19/082M:	. . . . Multistate logic
H03K19/082M2:	. . . . . one of the states being the high impedance or floating state
H03K19/084:	. . . . Diode-transistor logic
H03K19/084B:	. . . . . Complementary transistor logic (CTL)
H03K19/084S:	. . . . . Schottky transistor logic (STL)
H03K19/086:	. . . . Emitter coupled logic
H03K19/086B:	. . . . . Emitter function logic (EFL); Base coupled logic (BCL)
H03K19/086S:	. . . . . Stacked emitter coupled logic H03K19/173C4 takes precedence
H03K19/088:	. . . . Transistor-transistor logic
H03K19/08A:	. . . using charge transfer devices (DTC, CCD)
H03K19/08L:	. . . Threshold logic
H03K19/09:	. . . . Resistor-transistor logic
H03K19/091:	. . . . Integrated injection logic or merged transistor logic
H03K19/091B:	. . . . . Static induction logic (STIL) when the logic function is fullfilled by a fet H03K19/094B3
H03K19/091C:	. . . . . Integrated schottky logic (ISL)
H03K19/091M:	. . . . . Multistate logic
H03K19/094:	. . . using field-effect transistors
H03K19/0944:	. . . . using MOSFET or insulated gate field-effect transistors, i.e. IGFET
H03K19/0944B:	. . . . . of the same canal type
H03K19/0944B2:	. . . . . . using a combination of enhancement and depletion transistors
H03K19/0944B2A:	. . . . . . . with active depletion transistors
H03K19/0944B4:	. . . . . . using only depletion transistors
H03K19/0944C:	. . . . . in combination with bipolar transistors (BIMOS)
H03K19/0948:	. . . . . using CMOS or complementary insulated gate field-effect transistors
H03K19/0948B:	. . . . . . using a combination of enhancement and depletion transistors
H03K19/0948B2:	. . . . . . . with active depletion transistors
H03K19/0948D:	. . . . . . using only depletion transistors
H03K19/094B:	. . . . using junction field-effect transistors H03K19/096 takes precedence
H03K19/094B1:	. . . . . of the same canal type
H03K19/094B2:	. . . . . of complementary type
H03K19/094B3:	. . . . . with gate injection or static induction (STIL) (H03K19/091Btakes precedence)
H03K19/094B4:	. . . . . in combination with bipolar transistors (BIFET)
H03K19/094E:	. . . . Diode field-effect transistor logic H03K19/0956, H03K19/096 take precedence
H03K19/094M:	. . . . Multistate logic H03K19/096 takes precedence
H03K19/094M2:	. . . . . one of the states being the high impedance or floating state
H03K19/094S:	. . . . with coupled sources or source coupled logic H03K19/096 takes precedence
H03K19/094S2:	. . . . . Source coupled field-effect logic (SCFL)
H03K19/0952:	. . . . using Schottky type FET MESFET
H03K19/0956:	. . . . Schottky diode FET logic
H03K19/096:	. . . . Synchronous circuits, i.e. using clock signals H03K19/017C, H03K19/0185B8 take precedence
H03K19/096C:	. . . . . using transistors of complementary type H03K19/096T takes precedence
H03K19/096T:	. . . . . Self-timed logic
H03K19/098:	. . . using thyristors
H03K19/10:	. . . using tunnel diodes
H03K19/12:	. . using diode rectifiers diode-transistor logic H03K19/084
H03K19/14:	. . using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
H03K19/16:	. . using saturable magnetic devices
H03K19/162:	. . . using parametrons
H03K19/164:	. . . using ferro-resonant devices
H03K19/166:	. . . using transfluxors
H03K19/168:	. . . using thin-film devices
H03K19/17:	. . using twistors
H03K19/173:	. . using elementary logic circuits as components
H03K19/173B:	. . . Optimisation thereof
H03K19/173B2:	. . . . by limitation or reduction of the pin/gate ratio for data-processing equipment G06F1/22
H03K19/173C:	. . . Controllable logic circuits H03K19/177 takes precedence
H03K19/173C1:	. . . . by wiring, e.g. uncommitted logic arrays
H03K19/173C1A:	. . . . . in which the wiring can be modified
H03K19/173C2:	. . . . using multiplexers H03K19/173C4 takes precedence
H03K19/173C4:	. . . . using cascode switch logic (CSL) or cascode emitter coupled logic (CECL)
H03K19/177:	. . . arranged in matrix form
H03K19/177B:	. . . . the logic functions being realised by the interconnection of rows and columns
H03K19/177B2:	. . . . . using an AND matrix followed by an OR matrix, i.e. programmable logic arrays
H03K19/177B2A:	. . . . . . one of the matrices at least being reprogrammable
H03K19/177B2C:	. . . . . . with synchronous operation, i.e. using clock signals, e.g. of I/O or coupling register H03K19/177B2A takes precedence
H03K19/177B2C2:	. . . . . . . with synchronous operation of at least one of the logical matrixes
H03K19/177D:	. . . . [N: Structural details of logic blocks]
H03K19/177D2:	. . . . . [N: Reconfigurable logic blocks, e.g. lookup tables]
H03K19/177D4:	. . . . . [N: Macro blocks]
H03K19/177F:	. . . . [N: Structural details of routing resources]
H03K19/177F2:	. . . . . [N: for global signals, e.g. clock, reset]
H03K19/177F4:	. . . . . [N: for input/output signals]
H03K19/177H:	. . . . [N: Structural details of configuration resources]
H03K19/177H1:	. . . . . [N: for hot reconfiguration]
H03K19/177H2:	. . . . . [N: for partial configuration or reconfiguration]
H03K19/177H3:	. . . . . [N: for memories]
H03K19/177H4:	. . . . . [N: for reliability]
H03K19/177H5:	. . . . . [N: for security]
H03K19/177H6:	. . . . . [N: for powering on or off]
H03K19/177H7:	. . . . . [N: for speeding up configuration or reconfiguration]
H03K19/177J:	. . . . [N: Structural details for adapting physical parameters]
H03K19/177J2:	. . . . . [N: for supply voltage]
H03K19/177J4:	. . . . . [N: for I/O voltages]
H03K19/177J6:	. . . . . [N: for operating speed]
H03K19/177J8:	. . . . . [N: for physical disposition of blocks]
H03K19/18:	. . using galvano-magnetic devices, e.g. Hall-effect devices
H03K19/185:	. . using dielectric elements with variable dielectric constant, e.g. ferro-electric capacitors
H03K19/19:	. . . using ferro-resonant devices
H03K19/195:	. . using superconductive devices
H03K19/195C:	. . . with electro-magnetic coupling of the control current
H03K19/195D:	. . . with injection of the control current
H03K19/195D2:	. . . . using an inductorless circuit
H03K19/195H:	. . . Hybrid configuration, i.e. using electromagnetic coupling and injection of the control current
H03K19/20:	. characterised by logic function, e.g. AND, OR, NOR, NOT circuits
H03K19/21:	. . EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical
H03K19/21B:	. . . using bipolar transistors
H03K19/21C:	. . . using field-effect transistors
H03K19/21C2:	. . . . using Schottky type FET (MESFET)
H03K19/23:	. . Majority or minority circuits, i.e. giving output having the state of the majority or the minority of the inputs
H03K21/00:	Details of pulse counters or frequency dividers number-of-one counters G06F7/60P
H03K21/02:	. Input circuits
H03K21/02B:	. . comprising pulse shaping or differentiating circuits
H03K21/02C:	. . comprising logic circuits
H03K21/08:	. Output circuits
H03K21/10:	. . comprising logic circuits
H03K21/12:	. . . with parallel read-out
H03K21/14:	. . . with series read-out of number stored
H03K21/16:	. Circuits for carrying over pulses between successive decades
H03K21/17:	. . with field effect transistors
H03K21/18:	. Circuits for visual indication of the result
H03K21/20:	. . using glow discharge lamps
H03K21/38:	. Starting, stopping or resetting the counter
H03K21/40:	. Monitoring; Error detection; Preventing or correcting improper counter operation
H03K21/40M:	. . Arrangements for storing the counting state in case of power supply interruption
H03K21/40S:	. . Synchronisation of counters
H03K23/00:	Pulse counters comprising counting chains; Frequency dividers comprising counting chains
H03K23/00B:	. using elements not covered by groups H03K23/00C and H03K23/74 to H03K23/84
H03K23/00C:	. using semiconductor devices H03K23/78, H03K23/80, H03K23/84 take precedence
H03K23/00N:	. Counters counting in a non-natural counting order, e.g. random counters
H03K23/00N2:	. . using minimum change code, e.g. Gray Code
H03K23/00N3:	. . using excess three code
H03K23/00N5:	. . using biquinary code
H03K23/02:	. IPC3 comparing a chain of identical two-state stages which are successively brought from one state into the other by successive pulses, these being applied simultaneously to more than one stage, e.g. ring counter
H03K23/03:	. . IPC3 using relays
H03K23/035:	. . . IPC3 using two groups of relays, e.g. one for odd- and one for even-digit positions
H03K23/04:	. . IPC3 using bi-stable regenerative trigger circuits
H03K23/06:	. . . IPC3 in which the active elements are only vacuum tubes
H03K23/08:	. . . IPC3 in which the active elements are only semiconductor devices having at least three electrodes
H03K23/24:	. IPC3 comprising a chain of bi-stable stages, the pulses being applied to one stage only
H03K23/26:	. . IPC3 using bi-stable regenerative trigger circuits
H03K23/28:	. . . IPC3 in which the active elements are only vacuum tubes
H03K23/30:	. . . IPC3 in which the active elements are only semiconductor devices having at least three electrodes
H03K23/40:	. Gating or clocking signals applied to all stages, i.e. synchronous counters H03K23/74 to H03K23/84 take precedence
H03K23/42:	. . Out-of-phase gating or clocking signals applied to counter stages
H03K23/42B:	. . . using bistables
H03K23/44:	. . . using field-effect transistors H03K23/46 and H03K23/42B take precedence
H03K23/46:	. . . using charge transfer devices, i.e. bucket brigade or charge coupled devices
H03K23/48:	. . with a base or radix other than a power of two
H03K23/48K:	. . . with a base which is an odd number
H03K23/48N:	. . . with a base which is a non-integer
H03K23/50:	. . using bi-stable regenerative trigger circuits
H03K23/50B:	. . . with a base or a radix other than a power of two H03K23/54 takes precedence
H03K23/50B2:	. . . . with a base which is an odd number
H03K23/50B4:	. . . . with a base which is a non-integer
H03K23/52:	. . . using field-effect transistors
H03K23/54:	. . . Ring counters, i.e. feedback shift register counters
H03K23/54J:	. . . . with crossed-couplings, i.e. Johnson counters
H03K23/54K:	. . . . with a base which is an odd number
H03K23/54N:	. . . . with a base which is a non-integer
H03K23/54R:	. . . . Reversible counters
H03K23/56:	. . . Reversible counters
H03K23/58:	. Gating or clocking signals not applied to all stages, i.e. asynchronous counters
H03K23/58B:	. . with a base or a radix different of a power of two
H03K23/58B2:	. . . with a base which is an odd number
H03K23/58B4:	. . . with a base which is a non-integer
H03K23/58C:	. . Combination of a synchronous and an asynchronous counter
H03K23/60:	. . with field-effect transistors
H03K23/62:	. . reversible
H03K23/64:	. with a base or radix other than a power of two
H03K23/66:	. . with a variable counting base, e.g. by presetting or by adding or suppressing pulses
H03K23/66A:	. . . by adding or suppressing pulses
H03K23/66P:	. . . by presetting
H03K23/66S:	. . . by switching the base during a counting cycle
H03K23/68:	. . with a base which is a non-integer
H03K23/70:	. . with a base which is an odd number
H03K23/72:	. . Decade counters
H03K23/74:	. using relays
H03K23/76:	. using magnetic cores or ferro-electric capacitors
H03K23/76C:	. . using superconductive devices
H03K23/76F:	. . using thin-film devices
H03K23/78:	. using opto-electronic devices
H03K23/80:	. using semiconductor devices having only two electrodes, e.g. tunnel diode, multi-layer diode, e.g. with a negative resistance characteristic unijunction transistors H03K23/84
H03K23/82:	. using gas-filled tubes
H03K23/82B:	. . using vacuum tubes
H03K23/84:	. using thyristors or unijunction transistors
H03K23/86:	. reversible
H03K25/00:	Pulse counters with step-by-step integration and static storage; Analogous frequency dividers
H03K25/02:	. comprising charge storage, e.g. capacitor without polarisation hysteresis
H03K25/04:	. . using auxiliary pulse generator triggered by the incoming pulses
H03K25/12:	. comprising hysteresis storage
H03K27/00:	Pulse counters in which pulses are continuously circulated in a closed loop; Analogous frequency dividers
H03K29/00:	Pulse counters comprising multi-stable elements, e.g. for ternary scale, for decimal scale; Analogous frequency dividers
H03K29/04:	. using multi-cathode gas discharge tubes
H03K29/06:	. using beam-type tubes, e.g. magnetrons, cathode-ray tubes
H03K99/00:	Subject matter not provided for in other groups of this subclass