Search results for CPC class: C23C16/45525


CPC class description: C23C16/45525

C:CHEMISTRY; METALLURGY
 C21: METALLURGY; METALLURGY OF IRON
 C23: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL (by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04); CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (for specific applications, see the relevant places, e.g. for manufacturing resistors H01C17/06); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL (treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D, C25F)
  C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
   C23C16/00: Chemical deposition or plating by decomposition; Contact plating (solid state diffusion C23C8/00 - C23C12/00); Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes (reactive sputtering or vacuum evaporation C23C14/00)
   C23C16/44: characterised by the method of coating (C23C16/04 takes precedence)
   C23C16/455: . . characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
   C23C16/45523: . . . Pulsed gas flow or change of composition over time
   C23C16/45525: . . . . Atomic layer deposition [ALD]

Top 20 Assignees for CPC class: C23C16/45525
(grouped by application)



 

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