C:	CHEMISTRY; METALLURGY
C23:	COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL ; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL (treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D, C25F)
C23C:	COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
C23C2/00:	Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
C23C2/00B:	. Apparatus, e.g. crucibles, heating devices
C23C2/00D:	. Pattern or selective deposit without pre-treatment of the material to be coated
C23C2/02:	. Pre-treatment of the material to be coated, e.g. for coating on selected surface areas
C23C2/04:	. characterised by the coating material
C23C2/06:	. . Zinc or cadmium or alloys based thereon
C23C2/08:	. . Tin or alloys based thereon
C23C2/10:	. . Lead or alloys based thereon
C23C2/12:	. . Aluminium or alloys based thereon
C23C2/14:	. Removing excess of molten coatings; Controlling or regulating the coating thickness
C23C2/16:	. . using fluids under pressure, e.g. air knives
C23C2/18:	. . . Removing excess of molten coatings from elongated material
C23C2/18B:	. . . . Tubes; Wires
C23C2/20:	. . . . Strips; Plates
C23C2/22:	. . by rubbing, e.g. using knives, e.g. rubbing solids
C23C2/24:	. . using magnetic or electric fields
C23C2/26:	. After-treatment
C23C2/26B:	. . by applying solid particles to the molten coating
C23C2/28:	. . Thermal aftertreatment, e.g. treatment in oil bath
C23C2/28B:	. . . for remelting the coating
C23C2/30:	. Fluxes or coverings on molten baths
C23C2/32:	. using vibratory energy applied to the bath or substrate
C23C2/34:	. characterised by the shape of the material to be treated
C23C2/36:	. . Elongated material
C23C2/38:	. . . Wires; Tubes
C23C2/38B:	. . . . Tubes of specific length
C23C2/40:	. . . Plates; Strips
C23C2/40B:	. . . . Plates of specific length
C23C4/00:	Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
C23C4/00B:	. Pattern or selective deposit without pre-treatment of the material to be coated
C23C4/02:	. Pre-treatment of the material to be coated, e.g. for coating on selected surface areas
C23C4/04:	. characterised by the coating material
C23C4/06:	. . Metallic material e.g. mixture of metallic alloys and hard particles like SiC and WC C23C4/08B takes precedence
C23C4/06B:	. . . containing non-metal elements, e.g. C, Si, B, P or As, as free particles
C23C4/08:	. . . containing only metal elements
C23C4/08B:	. . . . MCrAl or MCrAlY type alloys where M = Ni,Co,Fe
C23C4/10:	. . Oxides, borides, carbides, nitrides, silicides or mixtures thereof
C23C4/10B:	. . . Oxides
C23C4/12:	. characterised by the method of spraying
C23C4/12A:	. . Spraying molten metal
C23C4/12B:	. . utilising detonation apparatus for spraying by means of detonations in general B05B7/00A
C23C4/12D:	. . utilising flame spraying apparatus for spraying by means of flame in general B05B7/20
C23C4/12G:	. . utilising wire arc spraying apparatus for spraying by means of electric arc in general B05B7/22
C23C4/12L:	. . utilising plasma spraying plasma torches in general H05H1/26, apparatus for spraying by means of electric arc in general B05B7/22
C23C4/12N:	. . Spraying in vacuum or in an inert gas chamber
C23C4/14:	. . for covering elongated material
C23C4/16:	. . . Wires; Tubes
C23C4/18:	. After-treatment
C23C4/18B:	. . Separation of the coating from the substrate
C23C6/00:	Coating by casting molten material on the substrate
C23C8/00:	Solid state diffusion of only non-metal elements into metallic material surfaces ; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
C23C8/02:	. Pre-treatment of the material to be coated
C23C8/04:	. Treatment of selected surface areas, e.g. using masks
C23C8/06:	. using gases
C23C8/08:	. . onyl one element being applied
C23C8/10:	. . . Oxidising
C23C8/12:	. . . . using elemental oxygen or ozone
C23C8/14:	. . . . . Oxidising of ferrous surfaces
C23C8/16:	. . . . using oxygen-containing compounds, e.g. water, carbon dioxide
C23C8/18:	. . . . . oxidising of ferrous surfaces
C23C8/20:	. . . Carburising
C23C8/22:	. . . . of ferrous surfaces
C23C8/24:	. . . Nitriding
C23C8/26:	. . . . of ferrous surfaces
C23C8/28:	. . more than one element being applied in one step
C23C8/30:	. . . Carbo-nitriding
C23C8/32:	. . . . of ferrous surfaces
C23C8/34:	. . more than one element being applied in more than one step
C23C8/36:	. . using ionised gases, e.g. ionitriding
C23C8/38:	. . . Treatment of ferrous surfaces
C23C8/40:	. using liquids, e.g. salt baths, liquid suspensions
C23C8/42:	. . only one element being applied
C23C8/44:	. . . Carburising
C23C8/46:	. . . . of ferrous surfaces
C23C8/48:	. . . Nitriding
C23C8/50:	. . . . of ferrous surfaces
C23C8/52:	. . more than one element being applied in one step
C23C8/54:	. . . Carbo-nitriding
C23C8/56:	. . . . of ferrous surfaces
C23C8/58:	. . more than one element being applied in more than one step
C23C8/60:	. using solids, e.g. powders, pastes
C23C8/62:	. . only one element being applied
C23C8/64:	. . . Carburising
C23C8/66:	. . . . of ferrous surfaces
C23C8/68:	. . . Boronising
C23C8/70:	. . . . of ferrous surfaces
C23C8/72:	. . more than one element being applied in one step
C23C8/74:	. . . Carbo-nitriding
C23C8/76:	. . . . of ferrous surfaces
C23C8/78:	. . more than one element being applied in more than one step
C23C8/80:	. After-treatment
C23C10/00:	Solid state diffusion of only metal elements or silicon into metallic material surfaces
C23C10/02:	. Pretreatment of the material to be coated
C23C10/04:	. Diffusion into selected surface areas, e.g. using masks
C23C10/06:	. using gases
C23C10/08:	. . only one element being diffused
C23C10/10:	. . . Chromising
C23C10/12:	. . . . of ferrous surfaces
C23C10/14:	. . more than one element being diffused in one step
C23C10/16:	. . more than one element being diffused in more than one step
C23C10/18:	. using liquids, e.g. salt baths, liquid suspensions
C23C10/20:	. . only one element being diffused
C23C10/22:	. . . Metal melt containing the element to be diffused
C23C10/24:	. . . Salt bath containing the element to be diffused
C23C10/26:	. . more than one element being diffused
C23C10/28:	. using solids, e.g. powders, pastes
C23C10/30:	. . using a layer of powder or paste on the surface
C23C10/32:	. . . Chromising
C23C10/34:	. . Embedding in a powder mixture, i.e. pack cementation
C23C10/36:	. . . only one element being diffused
C23C10/38:	. . . . Chromising
C23C10/40:	. . . . . of ferrous surfaces
C23C10/42:	. . . . . . in the presence of volatile transport additives, e.g. halogenated substances
C23C10/44:	. . . . Siliconising
C23C10/46:	. . . . . of ferrous surfaces
C23C10/48:	. . . . Aluminising
C23C10/50:	. . . . . of ferrous surfaces
C23C10/52:	. . . more than one element being diffused in one step
C23C10/54:	. . . . Diffusion of at least chromium
C23C10/56:	. . . . . and at least aluminium
C23C10/58:	. . . more than one element being diffused in more than one step
C23C10/60:	. After-treatment
C23C12/00:	Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
C23C12/02:	. Diffusion in one step
C23C14/00:	Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C14/00B:	. Separation of the coating from the substrate
C23C14/00D:	. Coating on a liquid substrate
C23C14/00E:	. characterized by the colour of the layer
C23C14/00F:	. Reactive sputtering or evaporation
C23C14/00F1:	. . Activation or excitation of reactive gases outside the coating chamber
C23C14/00F1B:	. . . Bombardment of substrates by reactive ion beams
C23C14/00F2:	. . Reactive sputtering
C23C14/00F2B:	. . . Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
C23C14/00F2D:	. . . Activation or excitation of reactive gases outside the coating chamber
C23C14/00F2D2:	. . . . Bombardment of substrates by reactive ion beams
C23C14/00F2F:	. . . using reactive gases other than O2, H2O, N2, NH3 or CH4
C23C14/00F2H:	. . . characterised by means for introducing or removing gases
C23C14/00F2J:	. . . characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
C23C14/00F2L:	. . . by exposing the substrates to reactive gases intermittently
C23C14/00F2L2:	. . . . by moving the substrates between spatially separate sputtering and reaction stations
C23C14/00F2N:	. . . Producing gradient compositions
C23C14/00F2P:	. . . in metallic mode
C23C14/00F2R:	. . . in transition mode
C23C14/02:	. Pre-treatment of the material to be coated
C23C14/02A:	. . Cleaning or etching treatments
C23C14/02A2:	. . . by means of bombardment with energetic particles or radiation
C23C14/02B:	. . Deposition of sublayers, e.g. to promote adhesion of the coating C23C14/02D takes precedence
C23C14/02B2:	. . . Metallic sublayers
C23C14/02D:	. . Graded interfaces
C23C14/02F:	. . Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
C23C14/04:	. Coating on selected surface areas, e.g. using masks
C23C14/04B:	. . using masks
C23C14/04B2:	. . . using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
C23C14/04D:	. . Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
C23C14/04F:	. . using irradiation by energy or particles
C23C14/06:	. characterised by the coating material
C23C14/06B:	. . Carbon
C23C14/06B2:	. . . Diamond
C23C14/06C:	. . AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C23C14/06D:	. . Sulfides, selenides or tellurides
C23C14/06D2:	. . . of zinc, cadmium or mercury
C23C14/06E:	. . Carbides
C23C14/06F:	. . Nitrides C23C14/06C takes precedence
C23C14/06F2:	. . . Boron nitride
C23C14/06F4:	. . . Silicon nitride
C23C14/06F6:	. . . Carbon nitride
C23C14/06G:	. . Carbonitrides
C23C14/06H:	. . Borides
C23C14/06J:	. . Oxynitrides
C23C14/06L:	. . Silicides
C23C14/06N:	. . Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
C23C14/06P:	. . Halides
C23C14/08:	. . Oxides
C23C14/08D:	. . . of aluminium, magnesium or beryllium
C23C14/08F:	. . . of alkaline earth metals
C23C14/08H:	. . . of refractory metals or yttrium
C23C14/08J:	. . . of iron group metals
C23C14/08L:	. . . of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C14/08N:	. . . of copper or solid solutions thereof
C23C14/08P:	. . . of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
C23C14/10:	. . Glass or silica
C23C14/12:	. . Organic material
C23C14/14:	. . Metallic material, boron or silicon
C23C14/16:	. . . on metallic substrates or on substrates of boron or silicon
C23C14/16B:	. . . . by cathodic sputtering
C23C14/18:	. . . on other inorganic substrates
C23C14/18B:	. . . . by cathodic sputtering
C23C14/20:	. . . on organic substrates
C23C14/20B:	. . . . by cathodic sputtering
C23C14/22:	. characterised by the process of coating
C23C14/22A:	. . Ion beam deposition C23C14/46, C23C14/48 take precedence
C23C14/22B:	. . specialy adapted for coating particles
C23C14/22D:	. . Oblique incidence of vaporised material on substrate
C23C14/22D2:	. . . in order to form films with columnar structure
C23C14/22F:	. . Gas flow assisted PVD deposition
C23C14/24:	. . Vacuum evaporation
C23C14/24A:	. . . Crucibles for source material C23C14/28, C23C14/30 take precedence
C23C14/24B:	. . . Replenishment of source material
C23C14/26:	. . . by resistance or inductive heating of the source
C23C14/28:	. . . by wave energy or particle radiation
C23C14/30:	. . . . by electron bombardment
C23C14/32:	. . . by explosion; by evaporation and subsequent ionisation of the vapours e.g. ion-plating
C23C14/32A:	. . . . Electric arc evaporation
C23C14/34:	. . Sputtering
C23C14/34B:	. . . Cathode assembly for sputtering apparatus, e.g. Target
C23C14/34B2:	. . . . Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
C23C14/34B4:	. . . . using heated targets
C23C14/34B6:	. . . . using liquid targets
C23C14/34C:	. . . Applying energy to the substrate during sputtering
C23C14/34C2:	. . . . using an ion beam
C23C14/34C4:	. . . . using substrate bias
C23C14/34D:	. . . using other particles than noble gas ions C23C14/00F2, C23C14/46 take precedence
C23C14/34F:	. . . using more than one target C23C14/56 takes precedence
C23C14/34G:	. . . Introduction of auxiliary energy into the plasma
C23C14/34G2:	. . . . using electrons, e.g. triode sputtering
C23C14/34J:	. . . using pulsed power to the target
C23C14/34P:	. . . Variation of parameters during sputtering
C23C14/35:	. . . by application of a magnetic field, e.g. magnetron sputtering C23C14/34D takes precedence
C23C14/35B:	. . . . using a magnetic field in close vicinity to the substrate
C23C14/35D:	. . . . using more than one target C23C14/56 takes precedence
C23C14/35F:	. . . . Introduction of auxiliary energy into the plasma
C23C14/35F2:	. . . . . using electrons, e.g. triode sputtering
C23C14/35F4:	. . . . . Microwaves, e.g. electron cyclotron resonance enhanced sputtering
C23C14/35F6:	. . . . . Inductive energy
C23C14/46:	. . . by ion beam produced by an external ion source
C23C14/48:	. . Ion implantation
C23C14/50:	. . Substrate holders
C23C14/50B:	. . . for rotation of the substrates
C23C14/52:	. . Means for observation of the coating process
C23C14/54:	. . Controlling or regulating the coating process
C23C14/54B:	. . . Heating or cooling of the substrates
C23C14/54D:	. . . Controlling the film thickness or evaporation rate
C23C14/54D2:	. . . . using measurement on the vapor source
C23C14/54D4:	. . . . using measurement in the gas phase
C23C14/54D6:	. . . . using measurement on deposited material
C23C14/54D6B:	. . . . . using crystal oscillators
C23C14/54D6D:	. . . . . using optical methods
C23C14/54F:	. . . Controlling the composition
C23C14/56:	. . Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
C23C14/56B:	. . . for coating elongated substrates
C23C14/56D:	. . . Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
C23C14/56D2:	. . . . using a load-lock chamber
C23C14/56F:	. . . Transferring the substrates through a series of coating stations C23C14/56B takes precedence
C23C14/58:	. After-treatment
C23C14/58B:	. . Thermal treatment
C23C14/58B2:	. . . using lasers
C23C14/58B4:	. . . using electron bombardment
C23C14/58D:	. . Plasma treatment
C23C14/58D2:	. . . Ion beam bombardment
C23C14/58F:	. . Non-reactive treatment
C23C14/58H:	. . Reactive treatment
C23C14/58H2:	. . . Oxidation
C23C14/58H4:	. . . Nitriding
C23C14/58H6:	. . . Treatment with sulfur, selenium or tellurium
C23C14/58J:	. . Removal of material
C23C14/58J2:	. . . by mechanical treatment
C23C14/58L:	. . Mechanical treatment (involving removal of material 14/58J2)
C23C14/58N:	. . Mixing of deposited material
C23C16/00:	Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
C23C16/00D:	. Coating on a liquid substrate
C23C16/00F:	. characterized by the colour of the layer
C23C16/01:	. on temporary substrates, e.g. substrates subsequently removed by etching
C23C16/02:	. Pretreatment of the material to be coated
C23C16/02B:	. . by heating
C23C16/02B2:	. . . in a reactive atmosphere C23C16/02D takes precedence
C23C16/02D:	. . by cleaning or etching
C23C16/02D2:	. . . by etching with a reactive gas
C23C16/02D4:	. . . by etching with a plasma
C23C16/02F:	. . Physical treatment to alter the texture of the surface, e.g. scratching or polishing
C23C16/02F2:	. . . Irradiation with laser or particle beam
C23C16/02H:	. . Deposition of sub-layers, e.g. to promote the adhesion of the main coating
C23C16/02H2:	. . . of metallic sub-layers C23C16/02H4 takes precedence
C23C16/02H4:	. . . Graded interfaces
C23C16/04:	. Coating on selected surface areas, e.g. using masks
C23C16/44N:	. . Methods specially adapted for making fine particles
C23C16/04B:	. . using masks
C23C16/04D:	. . Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
C23C16/04F:	. . using irradiation by energy or particles
C23C16/06:	. characterised by the deposition of metallic material
C23C16/08:	. . from metal halides
C23C16/10:	. . . Deposition of chromium only
C23C16/12:	. . . Deposition of aluminium only
C23C16/14:	. . . Deposition of only one other metal element
C23C16/16:	. . from metal carbonyl compounds
C23C16/18:	. . from metallo-organic compounds
C23C16/20:	. . . Deposition of aluminium only
C23C16/22:	. characterised by the deposition of inorganic material, other than metallic material
C23C16/24:	. . Deposition of silicon only
C23C16/26:	. . Deposition of carbon only
C23C16/27:	. . . Diamond only
C23C16/27B:	. . . . using other elements in the gas phase besides carbon and hydrogen (C23C16/27D2 takes precedence)[N0008]
C23C16/27B2:	. . . . . Doping or introduction of a secondary phase in the diamond[N0008]
C23C16/27B2D:	. . . . . . Introduction of a secondary phase in the diamond[N0008]
C23C16/27C:	. . . . using hot filaments
C23C16/27D:	. . . . Control of diamond crystallography[N0008]
C23C16/27D2:	. . . . . using other elements in the gas phase besides carbon and hydrogen[N0008]
C23C16/27E:	. . . . using DC, AC or RF discharges
C23C16/27F:	. . . . using hot filaments
C23C16/27F2:	. . . . . using other elements in the gas phase besides carbon and hydrogen (C23C16/27F4B takes precedence)[N0008]
C23C16/27F2B:	. . . . . . Doping or introduction of a secondary phase in the diamond[N0008]
C23C16/27F4:	. . . . . Control of diamond crystallography[N0008]
C23C16/27F4B:	. . . . . . using other elements in the gas phase besides carbon and hydrogen[N0008]
C23C16/27G:	. . . . using microwave discharges
C23C16/27H:	. . . . using combustion torches[N0008]
C23C16/27H2:	. . . . . using other elements in the gas phase than carbon, hydrogen and oxygen[N0008]
C23C16/27H2B:	. . . . . . Doping or introduction of a secondary phase in the diamond[N0008]
C23C16/27H4:	. . . . . Control of diamond crystallography[N0008]
C23C16/27J:	. . . . using combustion torches
C23C16/27K:	. . . . using DC, AC or RF discharges[N0008]
C23C16/27K2:	. . . . . using other elements in the gas phase besides carbon and hydrogen[N0008]
C23C16/27K2B:	. . . . . . Doping or introduction of a secondary phase in the diamond[N0008]
C23C16/27K4:	. . . . . Control of diamond crystallography[N0008]
C23C16/27L:	. . . . using plasma jets
C23C16/27M:	. . . . using microwave discharges[N0008]
C23C16/27M2:	. . . . . using other elements in the gas phase besides carbon and hydrogen (C23C16/27M4B takes precedence)[N0008]
C23C16/27M2B:	. . . . . . Doping or introduction of a secondary phase in the diamond[N0008][C0307]
C23C16/27M4:	. . . . . Control of diamond crystallography[N0008]
C23C16/27M4B:	. . . . . . using other elements in the gas phase besides carbon and hydrogen[N0008]
C23C16/27N:	. . . . using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
C23C16/27P:	. . . . using plasma jets[N0008]
C23C16/27P2:	. . . . . using other elements in the gas phase besides carbon, hydrogen and inert gas[N0008]
C23C16/27P2B:	. . . . . . Doping or introduction of a secondary phase in the diamond[N0008]
C23C16/27P4:	. . . . . Control of diamond crystallography[N0008]
C23C16/27Q:	. . . . doping or introduction of a secondary phase in the diamond
C23C16/27S:	. . . . control of diamond crystallography
C23C16/28:	. . Deposition of only one other non-metal element
C23C16/30:	. . Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C16/30B:	. . . AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C23C16/30B2:	. . . . Nitrides
C23C16/30C:	. . . Sulfides, selenides, or tellurides
C23C16/30C2:	. . . . AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
C23C16/30E:	. . . Oxynitrides
C23C16/32:	. . . Carbides
C23C16/32B:	. . . . Silicon carbide
C23C16/34:	. . . Nitrides C23C16/30B2 takes precedence
C23C16/34B:	. . . . Boron nitride
C23C16/34C:	. . . . Silicon nitride
C23C16/34D:	. . . . Carbon nitride
C23C16/36:	. . . Carbonitrides
C23C16/38:	. . . Borides
C23C16/40:	. . . Oxides
C23C16/40B:	. . . . containing silicon
C23C16/40B2:	. . . . . Silicon dioxide
C23C16/40D:	. . . . of aluminium, magnesium or beryllium
C23C16/40F:	. . . . of alkaline earth metals
C23C16/40H:	. . . . of refractory metals or yttrium
C23C16/40J:	. . . . of iron group metals
C23C16/40L:	. . . . of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C16/40N:	. . . . of copper or solid solutions thereof
C23C16/40P:	. . . . of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
C23C16/42:	. . . Silicides
C23C16/44:	. characterised by the method of coating
C23C16/442:	. . using fluidised bed process
C23C16/448:	. . characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C16/448B:	. . . by evaporation using carrier gas in contact with the source material C23C16/448H takes precedence
C23C16/448B2:	. . . . by bubbling of carrier gas through liquid source material
C23C16/448B4:	. . . . using a porous body
C23C16/448D:	. . . by evaporation without using carrier gas in contact with the source material C23C16/448H takes precedence
C23C16/448H:	. . . by producing an aerosol and subsequent evaporation of the droplets or particles
C23C16/448J:	. . . by using a condenser
C23C16/448K:	. . . by in situ generation of reactive gas by chemical or electrochemical reaction
C23C16/44A:	. . Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
C23C16/44A10:	. . . [N: by purging residual gases from the reaction chamber or gas lines]
C23C16/44A12:	. . . characterised by sealing means
C23C16/44A2:	. . . Reduction of impurities in the source gas
C23C16/44A4:	. . . Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
C23C16/44A6:	. . . Cleaning of reactor or parts inside the reactor by using reactive gases
C23C16/44A8:	. . . Cleaning of reactor or reactor parts by using wet or mechanical methods
C23C16/44C:	. . Cooling of the reaction chamber walls C23C16/455K8 takes precedence
C23C16/44H:	. . Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
C23C16/44J:	. . Electrochemical vapour deposition (EVD)
C23C16/44L:	. . Acoustic wave CVD
C23C16/44P:	. . Methods specially adapted for coating powder
C23C16/44R:	. . Methods for making free-standing articles C23C16/00B takes precedence
C23C16/452:	. . . by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
C23C16/453:	. . passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
C23C16/455:	. . characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
C23C16/455A:	. . . [N: Flow conditions in reaction chamber]
C23C16/455A2:	. . . . [N: Laminar flow]
C23C16/455A4:	. . . . [N: Turbulent flow]
C23C16/455A6:	. . . . [N: Radial flow]
C23C16/455A8:	. . . . [N: Jet streams]
C23C16/455B:	. . . [N: Premixing before introduction in the reaction chamber]
C23C16/455C:	. . . [N: Mixing in close vicinity to the substrate]
C23C16/455D:	. . . [N: Confinement of gases to vicinity of substrate]
C23C16/455E:	. . . [N: Inert gas curtains]
C23C16/455E2:	. . . . [N: the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery]
C23C16/455F:	. . . [N: Pulsed gas flow or change of composition over time]
C23C16/455F2:	. . . . Atomic layer deposition (ALD)
C23C16/455F2B:	. . . . . characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
C23C16/455F2B2:	. . . . . . specially adapted for making a layer stack of alternating different compositions or gradient compositions
C23C16/455F2B4:	. . . . . . specially adapted for making ternary or higher compositions
C23C16/455F2B6:	. . . . . . Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
C23C16/455F2B8:	. . . . . . Use of plasma, radiation or electromagnetic fields
C23C16/455F2B8B:	. . . . . . . Plasma being used continuously during the ALD cycle
C23C16/455F2B8D:	. . . . . . . Plasma being used non-continuously in between ALD reactions C23C16/56 takes precedence
C23C16/455F2B8F:	. . . . . . . Plasma being used non-continuously during the ALD reactions
C23C16/455F2D:	. . . . . characterized by the apparatus
C23C16/455F2D2:	. . . . . . specially adapted for a substrate stack in the ALD reactor
C23C16/455F2D4:	. . . . . . having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
C23C16/455F2D4B:	. . . . . . . for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
C23C16/455F2H:	. . . . . characterized by the use of precursors specially adapted for ALD
C23C16/455F2K:	. . . . . applied in non-semiconductor technology
C23C16/455F4:	. . . .  Atomic layer deposition with inert gas puring step[N0601]
C23C16/455G:	. . . [N: Pulsed pressure or control pressure]
C23C16/455H:	. . . [N: Diffusion of reactive gas to substrate]
C23C16/455J:	. . . Gas plumbing upstream of the reaction chamber
C23C16/455K:	. . . [N: Gas nozzles]
C23C16/455K10:	. . . . [N: Nozzles for more than one gas]
C23C16/455K12:	. . . . [N: Coaxial inlets for each gas]
C23C16/455K14:	. . . . [N: Elongated nozzles, tubes with holes]
C23C16/455K16:	. . . . [N: Perforated rings]
C23C16/455K2:	. . . . [N: Shower nozzles]
C23C16/455K4:	. . . . [N: Porous nozzles]
C23C16/455K6:	. . . . [N: Heated nozzles]
C23C16/455K8:	. . . . [N: Cooled nozzles]
C23C16/455M:	. . . [N: Expansion of gas before it reaches the substrate]
C23C16/455N:	. . . [N: Compression of gas before it reaches the substrate]
C23C16/455P:	. . . [N: Mechanical means for changing the gas flow]
C23C16/455P2:	. . . . [N: Movable means, e.g. fans]
C23C16/455P4:	. . . . [N:Fixed means, e.g. wings, baffles]
C23C16/455R:	. . . [N: Recirculation of reactive gases]
C23C16/455T:	. . . [N: Atmospheric CVD gas inlets with no enclosed reaction chamber]
C23C16/455V:	. . . Reactive back side gas
C23C16/458:	. . characterised by the method used for supporting substrates in the reaction chamber
C23C16/458B:	. . . characterised by material of construction or surface finish of the means for supporting the substrate
C23C16/458D:	. . . Rigid and flat substrates, e.g. plates or discs C23C16/458B takes precedence
C23C16/458D2:	. . . . the substrate being supported substantially horizontally
C23C16/458D2B:	. . . . . the substrate being rotated
C23C16/458D2D:	. . . . . Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
C23C16/458D2F:	. . . . . Elements in the interior of the support, e.g. electrodes, heating or cooling devices
C23C16/458D4:	. . . . the substrate being supported substantially vertically
C23C16/458D4B:	. . . . . the substrate being rotated
C23C16/46:	. . characterised by the method used for heating the substrate
C23C16/46B:	. . . Cooling of the substrate
C23C16/46B2:	. . . . using thermal contact gas
C23C16/48:	. . by irradiation, e.g. photolysis, radiolysis, particle radiation
C23C16/48B:	. . . by radiant heating of the substrate
C23C16/48D:	. . . using incoherent light, UV to IR, e.g. lamps
C23C16/48F:	. . . using coherent light, UV to IR, e.g. lasers
C23C16/48H:	. . . using X-ray radiation
C23C16/48J:	. . . using synchrotron radiation
C23C16/48L:	. . . using ion beam radiation
C23C16/48N:	. . . using electron radiation
C23C16/48P:	. . . Protection of windows for introduction of radiation into the coating chamber
C23C16/50:	. . using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
C23C16/503:	. . . using dc or ac discharges
C23C16/505:	. . . using radio frequency discharges
C23C16/507:	. . . . using external electrodes, e.g. in tunnel type reactors
C23C16/509:	. . . . using internal electrodes
C23C16/509B:	. . . . . Coaxial electrodes
C23C16/509D:	. . . . . Flat-bed apparatus
C23C16/511:	. . . using microwave discharges
C23C16/513:	. . . using plasma jets
C23C16/515:	. . . using pulsed discharges
C23C16/517:	. . . using a combination of discharges covered by two or more of groups C23C16/503 to C23C16/515
C23C16/52:	. . Controlling or regulating the coating process
C23C16/54:	. . Apparatus specially adapted for continuous coating
C23C16/54B:	. . . for coating elongated substrates
C23C16/56:	. After-treatment
C23C18/00:	Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating ; Contact plating
C23C18/02:	. by thermal decomposition
C23C18/04:	. . Pre-treatment of the material to be coated
C23C18/06:	. . Coating on selected surface areas, e.g. using masks
C23C18/08:	. . characterised by the deposition of metallic material
C23C18/10:	. . . Deposition of aluminium only
C23C18/12:	. . characterised by the deposition of inorganic material other than metallic material
C23C18/12C:	. . .
C23C18/12C2:	. . . . Oxides, e.g. ceramics
C23C18/12C2B:	. . . . . Zeolites, glasses
C23C18/12C2D:	. . . . . Metal oxides C23C18/12C2B takes precedence
C23C18/12C4:	. . . . Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
C23C18/12E:	. . . Deposition of multilayers of inorganic material
C23C18/12G:	. . . Composition of the substrate
C23C18/12G2:	. . . . Organic substrates
C23C18/12G2B:	. . . . . Composite substrates, e.g. laminated, premixed
C23C18/12G4:	. . . . Metallic substrates
C23C18/12G6:	. . . . Inorganic substrates other than metallic
C23C18/12J:	. . . Process of deposition of the inorganic material
C23C18/12J10:	. . . . performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
C23C18/12J12:	. . . . Control of temperature, e.g. gradual temperature increase, modulation of temperature
C23C18/12J14:	. . . . with flow inducing means, e.g. ultrasonic
C23C18/12J16:	. . . . by heating of the substrate
C23C18/12J18:	. . . . with after-treatment of the deposited inorganic material
C23C18/12J2:	. . . . Sol or sol-gel processing
C23C18/12J4:	. . . . Spray pyrolysis
C23C18/12J6:	. . . . involving particles, e.g. carbon nanotubes (CNT), flakes
C23C18/12J6B:	. . . . . Particles formed in situ
C23C18/12J6D:	. . . . . Preformed particles
C23C18/12J8:	. . . . performed under inert atmosphere
C23C18/14:	. Decomposition by irradiation, e.g. photolysis, particle radiation
C23C18/16:	. by reduction or substitution, e.g. electroless plating
C23C18/16B:	. . Process or apparatus
C23C18/16B2:	. . . coating on selected surface areas
C23C18/16B2B:	. . . . by masking
C23C18/16B2D:	. . . . [N: by direct patterning]
C23C18/16B2D2:	. . . . . [N: from pretreatment step, i.e. selective pre-treatment]
C23C18/16B2D4:	. . . . . [N: from plating step, e.g. inkjet]
C23C18/16B2D6:	. . . . . [N: through irradiation means]
C23C18/16B2F:	. . . . [N: plating on one side]
C23C18/16B2F2:	. . . . . [N: interior or inner surface]
C23C18/16B4:	. . . Purification and regeneration of coating baths
C23C18/16B6:	. . . Apparatus for electroless plating
C23C18/16B6B:	. . . . [N: Protection of inner surfaces of the apparatus]
C23C18/16B6B2:	. . . . . [N: through electrochemical processes]
C23C18/16B6B4:	. . . . . [N: through chemical processes]
C23C18/16B6B6:	. . . . . [N: through mechanical processes]
C23C18/16B6D:	. . . . [N: Specific elements or parts of the apparatus]
C23C18/16B6D2:	. . . . . [N: Supporting devices for articles to be coated]
C23C18/16B6F:	. . . . [N: Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells]
C23C18/16B8:	. . . [N: Process of electroless plating]
C23C18/16B8B:	. . . . [N: Composition of the substrate]
C23C18/16B8B2:	. . . . . [N: metallic substrate]
C23C18/16B8B4:	. . . . . [N: Substrates other than metallic, e.g. inorganic or organic or non-conductive]
C23C18/16B8B4B:	. . . . . . [N: Organic substrates, e.g. resin, plastic]
C23C18/16B8B4D:	. . . . . . [N: semiconductor (semiconductor H01L21/288)]
C23C18/16B8B6:	. . . . . [N: porous substrates]
C23C18/16B8D:	. . . . [N: Characteristics of the product obtained]
C23C18/16B8D2:	. . . . . [N: Porous product]
C23C18/16B8D4:	. . . . . [N: Multilayered product (layered product B32B)]
C23C18/16B8D4B:	. . . . . . [N: Two or more layers only obtained by electroless plating]
C23C18/16B8D4D:	. . . . . . [N: Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating]
C23C18/16B8F:	. . . . [N: Process features]
C23C18/16B8F10:	. . . . . [N: with additional means during the plating process]
C23C18/16B8F10B:	. . . . . . [N: Ultrasonics]
C23C18/16B8F10D:	. . . . . . [N: Radiant energy, e.g. laser]
C23C18/16B8F10F:	. . . . . . [N: Agitation, e. g. air introduction]
C23C18/16B8F10H:	. . . . . . [N: Electric field]
C23C18/16B8F10K:	. . . . . . [N: Magnetic field]
C23C18/16B8F2:	. . . . . [N: Electroless forming, i.e. substrate removed or destroyed at the end of the process]
C23C18/16B8F4:	. . . . . [N: with two steps starting with metal deposition followed by addition of reducing agent]
C23C18/16B8F6:	. . . . . [N: with two steps starting with addition of reducing agent followed by metal deposition]
C23C18/16B8F8:	. . . . . [N: Use of incorporated material in the solution or dispersion, e.g. particles, whiskers, wires]
C23C18/16B8H:	. . . . [N: Process conditions]
C23C18/16B8H10:	. . . . . [N: Control of electrolyte composition, e.g. measurement, adjustment (regeneration of bath C23C18/16B4)]
C23C18/16B8H12:	. . . . . [N: with supercritical condition, e.g. chemical fluid deposition]
C23C18/16B8H14:	. . . . . [N: with ionic liquid]
C23C18/16B8H2:	. . . . . [N: Heating of the solution]
C23C18/16B8H4:	. . . . . [N. Heating of the substrate]
C23C18/16B8H6:	. . . . . [N: Control of temperature, e.g. temperature of bath, substrate]
C23C18/16B8H8:	. . . . . [N: Control of atmosphere]
C23C18/16B8K:	. . . . [N: After-treatment]
C23C18/16B8K2:	. . . . . [N: Cooling, e g. forced or controlled cooling]
C23C18/16B8K4:	. . . . . [N: Heat-treatment]
C23C18/16B8K4B:	. . . . . . [N: Sequential heat treatment]
C23C18/16B8K6:	. . . . . . [N: Control of atmosphere]
C23C18/16B8K8:	. . . . . . [N: Control of temperature]
C23C18/18:	. . Pre-treatment of the material to be coated
C23C18/18A:	. . . of metallic material surfaces or of a non-specific material surfaces
C23C18/18A2:	. . . . [N: by mechanical pretreatment, e.g. grinding, sanding]
C23C18/18A2B:	. . . . . [N: by formation of electrostatic charges, e.g. tribofriction]
C23C18/18A4:	. . . . [N: by radiant energy]
C23C18/18A4B:	. . . . . [N: Heat]
C23C18/18A4D:	. . . . . [N: Radiation, e.g. UV, laser]
C23C18/18A6:	. . . . [N: by chemical pretreatment]
C23C18/18A6B:	. . . . . [N: only one step pretreatment]
C23C18/18A6B2:	. . . . . . [N: Use of metal, e.g. activation, sensitisation with noble metals]
C23C18/18A6B4:	. . . . . . [N: Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers]
C23C18/18A6D:	. . . . . [N: Multistep pretreatment]
C23C18/18A6D2:	. . . . . . [N: with use of metal first]
C23C18/18A6D4:	. . . . . . [N: with use of organic or inorganic compounds other than metals, first]
C23C18/18A8:	. . . . [N: by electrochemical pretreatment]
C23C18/18B:	. . . of surfaces of non-metallic or semiconducting in organic material
C23C18/18B2:	. . . . by mechanical pretreatment, e.g. grinding, sanding
C23C18/18B2B:	. . . . . [N: by formation of electrostatic charges, e.g. tribofriction]
C23C18/18B4:	. . . . [N: by radiant energy]
C23C18/18B4B:	. . . . . [N: Heat]
C23C18/18B4D:	. . . . . [N: Radiation, e.g. UV, laser]
C23C18/18B6:	. . . . [N: by chemical pretreatment]
C23C18/18B6B:	. . . . . [N: only one step pretreatment]
C23C18/18B6B2:	. . . . . . [N: Use of metal, e.g. activation, sensitisation with noble metals]
C23C18/18B6B4:	. . . . . . [N: Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers]
C23C18/18B6D:	. . . . . [N: Multistep pretreatment]
C23C18/18B6D2:	. . . . . . [N: with use of metal first]
C23C18/18B6D4:	. . . . . . [N: with use of organic or inorganic compounds other than metals, first]
C23C18/18B8:	. . . . [N: by electrochemical pretreatment]
C23C18/20:	. . . of organic surfaces, e.g. resins
C23C18/20B:	. . . . by other methods than those of C23C18/22 to C23C18/30
C23C18/20B2:	. . . . . by mechanical pretreatment, e.g. grinding, sanding
C23C18/20B2B:	. . . . . . [N: by formation of electrostatic charges, e.g. tribofriction]
C23C18/20B4:	. . . . . [N: by radiant energy]
C23C18/20B4B:	. . . . . . [N: Heat]
C23C18/20B4D:	. . . . . . [N: Radiation, e.g. UV, laser]
C23C18/20B6:	. . . . . [N: by chemical pretreatment]
C23C18/20B6B:	. . . . . . [N: only one step pretreatment]
C23C18/20B6B2:	. . . . . . . [N: Use of metal other than noble metals and tin, e.g. activation, sensitisation with metals (Sensitising with tin C23C18/28B, sensitising with noble metals C23C18/30)]
C23C18/20B6B4:	. . . . . . . [N: Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers]
C23C18/20B6D:	. . . . . . [N: Multistep pretreatment]
C23C18/20B6D2:	. . . . . . . [N: with use of metal first]
C23C18/20B6D4:	. . . . . . . [N: with use of organic or inorganic compounds other than metals, first]
C23C18/20B8:	. . . . . [N: by electrochemical pretreatment]
C23C18/22:	. . . . Roughening, e.g. by etching
C23C18/24:	. . . . . using acid aqueous solutions
C23C18/26:	. . . . . using organic liquids
C23C18/28:	. . . . Sensitising or activating (not used, see subgroups)
C23C18/28B:	. . . . . Sensitising or activating with tin based compound or composition
C23C18/30:	. . . . . Activating or accelerating or sensitising with palladium or other noble metal
C23C18/31:	. . Coating with metals
C23C18/32:	. . . Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
C23C18/34:	. . . . using reducing agents
C23C18/36:	. . . . . using hypophosphites
C23C18/38:	. . . Coating with copper
C23C18/40:	. . . . using reducing agents
C23C18/40B:	. . . . . Formaldehyde
C23C18/42:	. . . Coating with noble metals
C23C18/44:	. . . . using reducing agents
C23C18/48:	. . Coating with alloys
C23C18/50:	. . . with alloys based on iron, cobalt or nickel
C23C18/52:	. . using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 to C23C18/50
C23C18/54:	. Contact plating, i.e. electroless electrochemical plating
C23C20/00:	Chemical coating by decomposition of either solid compounds or suspensions of the coating forming compounds, without leaving reaction products of surface material in the coating
C23C20/02:	. Coating with metallic material
C23C20/04:	. . with metals
C23C20/06:	. Coating with inorganic material, other than metallic material
C23C20/08:	. . with compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C22/00:	Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
C23C22/02:	. using non-aqueous solutions
C23C22/03:	. . containing phosphorus compounds
C23C22/04:	. . containing hexavalent chromium compounds
C23C22/05:	. using aqueous solutions
C23C22/06:	. . using aqueous acidic solutions with pH less than 6
C23C22/07:	. . . containing phosphates
C23C22/08:	. . . . Orthophosphates
C23C22/10:	. . . . . containing oxidants
C23C22/12:	. . . . . containing zinc cations
C23C22/13:	. . . . . . containing also nitrate or nitrite anions
C23C22/14:	. . . . . . containing also chlorate anions
C23C22/16:	. . . . . . containing also peroxy-compounds
C23C22/17:	. . . . . . containing also organic acids
C23C22/18:	. . . . . containing manganese cations
C23C22/18B:	. . . . . . containing also zinc cations
C23C22/18B2:	. . . . . . . containing also nickel cations
C23C22/18E:	. . . . . . containing also copper cations
C23C22/18H:	. . . . . . containing also magnesium cations
C23C22/20:	. . . . . containing aluminium cations
C23C22/22:	. . . . . containing alkaline earth metal cations
C23C22/23:	. . . . Condensed phosphates
C23C22/24:	. . . containing hexavalent chromium compounds
C23C22/26:	. . . . containing also organic compounds
C23C22/27:	. . . . . Acids
C23C22/28:	. . . . . Macromolecular compounds
C23C22/30:	. . . . containing also trivalent chromium
C23C22/32:	. . . . containing also pulverulent metals
C23C22/33:	. . . . containing also phosphates
C23C22/34:	. . . containing fluorides or complex fluorides
C23C22/36:	. . . . containing also phosphates
C23C22/36A:	. . . . . containing titanium, zirconium or hafnium compounds
C23C22/36B:	. . . . . containing also zinc cations
C23C22/36D:	. . . . . containing also manganese cations
C23C22/36D2:	. . . . . . containing also zinc and nickel cations
C23C22/36F:	. . . . . containing alkaline earth metal cations
C23C22/36H:	. . . . . containing magnesium cations
C23C22/37:	. . . . containing also hexavalent chromium compounds
C23C22/38:	. . . . . containing also phosphates
C23C22/40:	. . . containing molybdates, tungstates or vanadates
C23C22/42:	. . . . containing also phosphates
C23C22/43:	. . . . containing also hexavalent chromium compounds
C23C22/44:	. . . . containing also fluorides or complex fluorides
C23C22/46:	. . . containing oxalates
C23C22/47:	. . . . containing also phosphates
C23C22/48:	. . . not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
C23C22/50:	. . . . Treatment of iron or alloys based thereon
C23C22/52:	. . . . Treatment of copper or alloys based thereon
C23C22/53:	. . . . Treatment of zinc or alloys based thereon
C23C22/54:	. . . . Treatment of refractory metals or alloys based thereon
C23C22/56:	. . . . Treatment of aluminium or alloys based thereon
C23C22/57:	. . . . Treatment of magnesium or alloys based thereon
C23C22/58:	. . . . Treatment of other metallic material
C23C22/60:	. . using alkaline aqueous solutions with pH greater than 8
C23C22/62:	. . . Treatment of iron or alloys based thereon
C23C22/63:	. . . Treatment of copper or alloys based thereon
C23C22/64:	. . . Treatment of refractory metals or alloys based thereon
C23C22/66:	. . . Treatment of aluminium or alloys based thereon
C23C22/67:	. . . . with solutions containing hexavalent chromium
C23C22/68:	. . using aqueous solutions with pH between 6 and 8
C23C22/70:	. using melts
C23C22/72:	. . Treatment of iron or alloys based thereon
C23C22/73:	. characterised by the process
C23C22/74:	. . for obtaining burned-in conversion coatings
C23C22/76:	. . Applying the liquid by spraying
C23C22/77:	. . Controlling or regulating of the coating process
C23C22/78:	. Pre-treatment of the material to be coated
C23C22/80:	. . with solutions containing titanium or zirconium compounds
C23C22/82:	. After-treatment
C23C22/83:	. . Chemical after-treatment
C23C22/84:	. . Dyeing
C23C22/86:	. Regeneration of coating baths
C23C24/00:	Coating starting from inorganic powder
C23C24/10D:	. . . Coating containing only metal elements
C23C24/02:	. by application of pressure only
C23C24/04:	. . Impact or kinetic deposition of particles
C23C24/04B:	. . . by trembling using impacting inert media
C23C24/06:	. . Compressing powdered coating material, e.g. by milling
C23C24/08:	. by application of heat or pressure and heat
C23C24/08B:	. . without intermediate formation of a liquid in the layer
C23C24/08B2:	. . . Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
C23C24/08B2B:	. . . . Coating with metal alloys or metal elements only
C23C24/08D:	. . Coating with metallic material
C23C24/08F:	. . Coating containing only metal elements
C23C24/10:	. . with intermediate formation of a liquid phase in the layer
C23C24/10B:	. . . Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
C23C24/10B2:	. . . . Coating with metal alloys or metal elements only
C23C26/00:	Coating not provided for in groups C23C2/00 to C23C24/00
C23C26/02:	. applying molten material to the substrate
C23C28/00:	Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 to C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
C23C28/02:	. only coatings only including layers of metallic material
C23C28/02A:	. . including at least one metal alloy layer
C23C28/02A2:	. . . with at least one MCrAlX layer
C23C28/02B:	. . only coatings of metal elements only
C23C28/02B2:	. . . with at least one zinc-based layer
C23C28/02C:	. . including at least one amorphous metallic material layer
C23C28/02D:	. . including at least one metal matrix material comprising a mixture of at least two metals or metal phases or metal matrix composites, e.g. metal matrix with embedded inorganic hard particles, CERMET, MMC.
C23C28/02F:	. . Including graded layers in composition or in physical properties, e.g. density, porosity, grain size
C23C28/04:	. only coatings of inorganic non-metallic material
C23C28/04A:	. . including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
C23C28/04B:	. . coatings specially adapted for cutting tools or wear applications.
C23C28/04C:	. . with at least one amorphous inorganic material layer, e.g. DLC, a-C:H, a-C:Me, the layer being doped or not
C23C28/04D:	. . with layers graded in composition or physical properties
C23C28/30:	. Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
C23C28/32:	. . including at least one pure metallic layer
C23C28/321:	. . . with at least one metal alloy layer
C23C28/3215:	. . . . at least one MCrAlX layer
C23C28/322:	. . . only coatings of metal elements only
C23C28/3225:	. . . . with at least one zinc-based layer
C23C28/323:	. . . with at least one amorphous metallic material layer
C23C28/324:	. . . with at least one metal matrix material layer comprising a mixture of at least two metals or metal phases or a metal-matrix material with hard embedded particles, e.g. WC-Me
C23C28/325:	. . . [with layers graded in composition or in physical properties]
C23C28/34:	. . including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
C23C28/341:	. . . with at least one carbide layer
C23C28/343:	. . . with at least one DLC or an amorphous carbon based layer, the layer being doped or not
C23C28/345:	. . . with at least one oxide layer
C23C28/3455:	. . . . with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
C23C28/347:	. . . with layers adapted for cutting tools or wear applications
C23C28/36:	. . including layers graded in composition or physical properties
C23C28/40:	. Coatings including alternating layers following a pattern, a periodic or defined repetition
C23C28/42:	. . characterized by the composition of the alternating layers
C23C28/44:	. . characterized by a measurable physical property of the alternating layer or system, e.g. thickness, density, hardness
C23C30/00:	Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
C23C30/00B:	. on hard metal substrates